С6144 2SC6144SG NPN транзистор datasheet
- Информация о материале
- Обновлено: 09.12.2023, 22:22
SANYO Semiconductors
DATA SHEET
NPN Epitaxial Planar Silicon Transistor
High-Current Switching Applications
Applications
• Relay drivers, lamp drivers, motor drivers
Features
• Adoption of MBIT process
• Large current capacitance (IC=10A)
• Low collector-to-emitter saturation voltage (VCE(sat)=180mV(typ.))
• High-speed switching (tf=25ns(typ.))
Specifications
Absolute Maximum Ratings at Ta=25°C
|
Parameter |
Symbol |
Conditions |
Ratings |
Unit |
|
Collector-to-Base Voltage |
VCBO |
60 |
V |
|
|
Collector-to-Emitter Voltage |
VCEO |
50 |
V |
|
|
Emitter-to-Base Voltage |
VEBO |
5 |
V |
|
|
Collector Current |
IC |
10 |
A |
|
|
Collector Current (Pulse) |
ICP |
13 |
A |
|
|
Base Current |
IB |
2 |
A |
|
|
Collector Dissipation |
PC |
Tc=25°C, PT≤1s |
25 |
W |
|
Junction Temperature |
Tj |
150 |
°C |
|
|
Storage Temperature |
Tstg |
--55 to +150 |
°C |
Electrical Characteristics at Ta=25°C
|
Parameter |
Symbol |
Conditions |
Ratings |
Unit |
||
|
min |
typ |
max |
||||
|
Collector Cutoff Current |
ICBO |
VCB=40V, IE=0A |
10 |
μA |
||
|
Emitter Cutoff Current |
IEBO |
VEB=4V, IC=0A |
10 |
μA |
||
|
DC Current Gain |
hFE |
VCE=2V, IC=270mA |
200 |
560 |
||
|
Gain-Bandwidth Product |
fT |
VCE=10V, IC=3A |
330 |
MHz |
||
|
Output Capacitance |
Cob |
VCB=10V, f=1MHz |
60 |
pF |
||
|
Collector-to-Emitter Saturation Voltage |
VCE(sat) |
IC=6A, IB=300mA |
180 |
360 |
mV |
|
|
Base-to-Emitter Saturation Voltage |
VBE(sat) |
IC=6A, IB=300mA |
1.2 |
V |
||
|
Collector-to-Base Breakdown Voltage |
V(BR)CBO |
IC=100μA, IE=0A |
60 |
V |
||
|
Collector-to-Emitter Breakdown Voltage |
V(BR)CEO |
IC=1mA, RBE=∞ |
50 |
V |
||
|
Emitter-to-Base Breakdown Voltage |
V(BR)EBO |
IE=100μA, IC=0A |
5 |
V |
||
|
Turn-On Time |
ton |
See specified Test Circuit. |
62 |
ns |
||
|
Storage Time |
tstg |
See specified Test Circuit. |
350 |
ns |
||
|
Fall Time |
tf |
See specified Test Circuit. |
25 |
ns |
||