A2222 2SA2222SG транзистор биполярный 50V, -10A, Low VCE(sat) PNP dfatasheet

2SA2222SG

Bipolar Transistor
–50V, –10A, Low VCE(sat) PNP TO-220F-3FS

Applications
• Relay drivers, lamp drivers, motor drivers

Features
• Adoption of MBIT process • Large current capacity (IC=--10A)
• Low collector-to-emitter saturation voltage (VCE(sat)=--250mV(typ.))
• High-speed switching (tf=22ns(typ.))

Specifications

Absolute Maximum Ratings at Ta=25°C

 

Parameter

Symbol

Conditions

Ratings

Unit

Collector-to-Base Voltage

VCBO

 

--50

V

Collector-to-Emitter Voltage

VCEO

 

--50

V

Emitter-to-Base Voltage

VEBO

 

--6

V

Collector Current

IC

 

--10

A

Collector Current (Pulse)

ICP

 

--13

A

Base Current

IB

 

--2

A

Collector Dissipation

PC

Tc=25°C, PT≤1s

25

W

Junction Temperature

Tj

 

150

°C

Storage Temperature

Tstg

 

--55 to +150

°C

2SA2222SG A2222 datasheet

Parameter

Symbol

Conditions

Ratings

Unit

min

typ

max

Collector Cutoff Current

ICBO

VCB=--40V, IE=0A

   

--10

μA

Emitter Cutoff Current

IEBO

VEB=--4V, IC=0A

   

--10

μA

DC Current Gain

hFE

VCE=--2V, IC=--270mA

150

 

450

 

Gain-Bandwidth Product

fT

VCE=--10V, IC=--1A

 

230

 

MHz

Output Capacitance

Cob

VCB=--10V, f=1MHz

 

115

 

pF

Collector-to-Emitter Saturation Voltage

VCE(sat)

IC=--6A, IB=--300mA

 

--250

--500

mV

Base-to-Emitter Saturation Voltage

VBE(sat)

IC=--6A, IB=--300mA

   

--1.2

V

Collector-to-Base Breakdown Voltage

V(BR)CBO

IC=--100μA, IE=0A

--50

   

V

Collector-to-Emitter Breakdown Voltage

V(BR)CEO

IC=--1mA, RBE=∞

--50

   

V

Emitter-to-Base Breakdown Voltage

V(BR)EBO

IE=--100μA, IC=0A

--6

   

V

Turn-On Time

ton

See specified Test Circuit.

 

40

 

ns

Storage Time

tstg

 

240

 

ns

Fall Time

tf

 

22

 

ns

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